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IRFIB5N50L, SiHFIB5N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 45 13 23 Single
D
FEATURES
500 0.67
* Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications * Lower Gate Charge Results in Simpler Drive Reqirements
RoHS
COMPLIANT
* Enhanced dV/dt Capabilities Offer Improved Ruggedness * Higher Gate Voltage Threshold Offers Improved Noise Immunity * Lead (Pb)-free
TO-220 FULLPAK
APPLICATIONS
G
* Zero Voltage Switching SMPS * Telecom and Server Power Supplies
GDS
S N-Channel MOSFET
* Uninterruptible Power Supplies * Motor Control Applications
ORDERING INFORMATION
Package Lead (Pb)-free TO-220 FULLPAK IRFIB5N50LPbF SiHFIB5N50L-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 30 4.7 3.0 16 0.33 140 4.0 3.0 42 13 - 55 to + 150 300d 10 1.1 UNIT V
A W/C mJ A mJ W V/ns C lbf * in N*m
TC = 25 C
for 10 s 6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 18 mH, RG = 25 , IAS = 4.0 A, dV/dt = 13 V/ns, (see fig. 12). c. ISD 4.0 A, dI/dt 280 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case.
Document Number: 91173 S-Pending-Rev. A, 24-Jun-08
WORK-IN-PROGRESS
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IRFIB5N50L, SiHFIB5N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 65 3.0 UNIT C/W
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Effective Output Capacitance (Energy Related) Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time IS ISM VSD trr MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss Coss eff. Coss eff. (ER) Qg Qgs Qgd RG td(on) tr td(off) tf
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 2.4 Ab
500 3.0 2.8
0.43 0.67 -
5.0 100 50 2.0 0.80 -
V V/C V nA A mA S
VDS = 50 V, ID = 2.4 A
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V, f = 1.0 MHz VDS = 400 V, f = 1.0 MHz VGS = 0 V VDS = 0 V to 400 Vc
-
1000 110 12 1360 31 75 55 2.0 13 17 26 10
45 13 23 ns nC pF
VGS = 10 V
ID = 4.0 A, VDS = 400 V, see fig. 7 and 16b
-
f = 1 MHz, open drain VDD = 250 V, ID = 4.0 A, RG = 9.0 , VGS = 10 V, see fig. 11a and 11bb
-
-
73 99 200 360
4.7 A 16 1.5 110 150 310 540 V ns
G
S
TJ = 25 C, IS = 4.0 A, VGS = 0 Vb TJ = 25 C, IF = 4.0 A, TJ = 125 C, dI/dt = 100 A/sb TJ = 25 C, IS = 4.0 A, TJ = 125 C, dI/dt = 100 A/sb
Body Diode Reverse Recovery Charge
Qrr
nC
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Document Number: 91173 S-Pending-Rev. A, 24-Jun-08
IRFIB5N50L, SiHFIB5N50L
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Current Forward Turn-On Time IRRM ton TJ = 25 C 6.7 10 A SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100
100
TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V
ID, Drain-to-Source Current (A)
10
10
TJ = 150
C
1
BOTTOM
I D, Drain-to-Source Current (A)
1
TJ = 25 C
0.1
5.5V
0.01
0.1
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100
0.01 5.0 6.0 7.0
V DS 50V = 20s PULSE WIDTH 8.0 9.0
VDS, Drain-to-Source Voltage (V)
V GS Gate-to-Source Voltage (V) ,
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
100
TOP VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V
3.0
I D = 4.0A
ID, Drain-to-Source Current (A)
2.5
RDS(on) , Drain-to-Source On Resistance
10
BOTTOM
2.0
1
5.5V
(Normalized)
1.5
1.0
0.1
20s PULSE WIDTH Tj = 150C
0.01 0.1 1 10 100
0.5
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Tj, Junction Temperature (C)
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91173 S-Pending-Rev. A, 24-Jun-08
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IRFIB5N50L, SiHFIB5N50L
Vishay Siliconix
100000
12
10000
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = C + C ds gd
VGS , Gate-to-Source Voltage (V)
I D = 4.0A
10
VDS = 400V VDS = 250V VDS = 100V
C, Capacitance(pF)
8
1000
Ciss Coss Crss
6
100
4
10
2
1 1 10 100 1000
0 0 5 10 15 20 25 30 35
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
10 9 8
I SD , Reverse Drain Current (A)
100
7
10
Energy (J)
6 5 4 3 2 1 0 0 100 200 300 400 500 600
T J= 25 C TJ = 150 C
1
V GS = 0 V
0.1 0.2 0.4 0.6 0.8 1.0 1.2
V SD ,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS
Fig. 8 - Typical Source-Drain Diode Forward Voltage
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Document Number: 91173 S-Pending-Rev. A, 24-Jun-08
IRFIB5N50L, SiHFIB5N50L
Vishay Siliconix
100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10
RG VDS VGS
RD
ID, Drain-to-Source Current (A)
D.U.T. + - VDD
100sec 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1msec 10msec 1000 10000
10 V
Pulse width 1 s Duty factor 0.1 %
Fig. 11a - Switching Time Test Circuit
VDS 90 %
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
5.0
10 % VGS
t d(on) tr t d(off) t f
4.0
Fig. 11b - Switching Time Waveforms
ID , Drain Current (A)
3.0
2.0
1.0
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
10
(Z thJC )
D = 0.50 1 0.20
Thermal Response
0.10 0.05 P DM 0.1 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 / t 2 +TC 1 10 t2
J = P DM x Z thJC
t 1, Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91173 S-Pending-Rev. A, 24-Jun-08 www.vishay.com 5
IRFIB5N50L, SiHFIB5N50L
Vishay Siliconix
6.0
V DS tp
VGS(th) Gate threshold Voltage (V)
5.0
ID = 250A
4.0
I AS
3.0
Fig. 15b - Unclamped Inductive Waveforms
2.0 -75 -50 -25 0 25 50 75 100 125 150
10 V
QG QGS VG Q GD
T J , Temperature ( C )
Fig. 13 - Threshold Voltage vs. Temperature
320
ID TOP BOTTOM 1.8A 2.5A 4.0A
EAS , Single Pulse Avalanche Energy (mJ)
240
Charge
Fig. 16a - Basic Gate Charge Waveform
160
Current regulator Same type as D.U.T.
50 k
80
12 V
0.2 F 0.3 F
D.U.T.
0 25 50 75 100 125 150
+ V - DS
Starting Tj, Junction Temperature
( C)
VGS
3 mA
Fig. 14 - Maximum Avalanche Energy vs. Drain Current
IG
ID Current sampling resistors
15 V
Fig. 16b - Gate Charge Test Circuit
VDS
L
Driver
RG 20 V tp
D.U.T IAS 0.01
+ A - VDD
A
Fig. 15a - Unclamped Inductive Test Circuit
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Document Number: 91173 S-Pending-Rev. A, 24-Jun-08
IRFIB5N50L, SiHFIB5N50L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode
forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 17 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91173.
Document Number: 91173 S-Pending-Rev. A, 24-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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